| PART |
Description |
Maker |
| NE57810 NE57810S |
Advanced DDR memory termination power with external reference voltage in
|
NXP Semiconductors
|
| CM3121 CM312102SB CM3121-02SB CM3121-02SH |
Dual Linear Voltage Regulator for DDR-I and DDR-II Memory
|
CALMIRCO[California Micro Devices Corp]
|
| ISL6444CA ISL6444CA- ISL6444 ISL6444CA-T |
PWM Controller, Dual, VOUT =0.8V-5.5V @ 1%, DDR memory, Broadband Gateway, 300kHz, VIN 4.5V to 28V
Dual PWM Controller with DDR Memory Option for Gateway Applications
|
INTERSIL[Intersil Corporation]
|
| 28F008C3 GT28F160C3B110 GT28F016C3B90 TE28F008C3T1 |
3 VOLT ADVANCED BOOT BLOCK 8- / 16- / 32-MBIT FLASH MEMORY FAMILY
STANDOFF HEX 6-32THR 2.5L ALUM
TVS, 6.5CA, BI, 6.5V, 400W, SMT
3 VOLT ADVANCED BOOT BLOCK 8-, 16-, 32-MBIT FLASH MEMORY FAMILY 3伏高级启动块8 - 6 - 32 - Mbit闪存家庭
3 VOLT ADVANCED BOOT BLOCK 8-, 16-, 32-MBIT FLASH MEMORY FAMILY 3伏高级启动块8 - 16 - 32 - Mbit闪存家庭
3 VOLT ADVANCED BOOT BLOCK 8-, 16-, 32-MBIT FLASH MEMORY FAMILY 3伏高级启动块8 - 6 - 2 - Mbit闪存家庭
TVS UNIDIRECT 7.5V 400W SMA
|
Intel Corp.
Intel, Corp.
|
| M368L6523BUM-LCC M381L6523BUM-LB3 M368L6523BTM-LCC |
64M X 64 DDR DRAM MODULE, 0.65 ns, DMA184
128M X 64 DDR DRAM MODULE, 0.65 ns, DMA184
128M X 72 DDR DRAM MODULE, 0.7 ns, DMA184
DDR SDRAM Unbuffered Module 184pin Unbuffered Module based on 512Mb B-die with 64/72-bit Non ECC/ECC 66 TSOP-II DDR SDRAM的缓冲模84pin缓冲模块基于512Mb乙芯片与64/72-bit非ECC / ECC6 TSOP-II
Flash Memory IC; Memory Size:4Mbit; Supply Voltage Max:3V; Package/Case:48-TSOP; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Access Time, Tacc:70ns; Series:S29AL
Flash Memory IC; Memory Size:4Mbit; Supply Voltage Max:3V; Package/Case:48-FBGA; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Access Time, Tacc:90ns; Series:S29AL
Single-Supply Voltage Translator 6-SOT-23 -40 to 85
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| RD28F3208C3T70 RD28F3208C3B90 |
TVS BIDIRECT 400W 90V SMA
3 VOLT INTEL Advanced Boot Block Flash Memory (C3) Stacked-Chip ScalPackage Familye SPECIALTY MEMORY CIRCUIT, PBGA66
|
INTEL CORP
Intel, Corp.
|
| NCP51200 |
3 Amp Source / Sink VTT Termination Regulator for DDR, DDR-2, DDR-3, DDR-4
|
ON Semiconductor
|
| P82C202A |
Advanced Memory Controller
|
Chips
|
| PI6CV857LA PI6CV857 PI6CV857L |
PLL Clock Driver for 2.5V DDR-SDRAM Memory
|
PERICOM[Pericom Semiconductor Corporation]
|
| CM3131-11SH CM3131 CM3131-01SB CM3131-01SH CM3131- |
Triple Linear Voltage Regulator for DDR-I/-II Memory
|
CALMIRCO[California Micro Devices Corp]
|
| KM48L16031BT-GFZ/Y/0 KM416L8031BT-GFZ/Y/0 KM44L160 |
DDR SDRAM Specification Version 0.61 DDR SDRAM的规格版.61
16M X 8 DDR DRAM, 0.8 ns, PDSO66 0.400 X 0.875 INCH, 0.65 MM PITCH, MS-024FC, TSOP2-66
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
